/**********
Copyright 1990 Regents of the University of California.  All rights reserved.
Author: 1985 Thomas L. Quarles
**********/

#ifndef MOS1
#define MOS1

#include "ifsim.h"
#include "cktdefs.h"
#include "gendefs.h"
#include "complex.h"
#include "noisedef.h"

/* declarations for level 1 MOSFETs */

/* information needed for each instance */

typedef struct sMOS1instance {
    struct sMOS1model *sMOS1modPtr; /* backpointer to model */
    struct sMOS1instance *MOS1nextInstance;  /* pointer to next instance of
                                              *current model*/
    IFuid MOS1name; /* pointer to character string naming this instance */
    int MOS1states;     /* index into state table for this device */

    int MOS1dNode;  /* number of the gate node of the mosfet */
    int MOS1gNode;  /* number of the gate node of the mosfet */
    int MOS1sNode;  /* number of the source node of the mosfet */
    int MOS1bNode;  /* number of the bulk node of the mosfet */
    int MOS1dNodePrime; /* number of the internal drain node of the mosfet */
    int MOS1sNodePrime; /* number of the internal source node of the mosfet */

    double MOS1l;   /* the length of the channel region */
    double MOS1w;   /* the width of the channel region */
    double MOS1drainArea;   /* the area of the drain diffusion */
    double MOS1sourceArea;  /* the area of the source diffusion */
    double MOS1drainSquares;    /* the length of the drain in squares */
    double MOS1sourceSquares;   /* the length of the source in squares */
    double MOS1drainPerimiter;
    double MOS1sourcePerimiter;
    double MOS1sourceConductance;   /*conductance of source(or 0):set in setup*/
    double MOS1drainConductance;    /*conductance of drain(or 0):set in setup*/
    double MOS1temp;    /* operating temperature of this instance */

    double MOS1tTransconductance;   /* temperature corrected transconductance*/
    double MOS1tSurfMob;            /* temperature corrected surface mobility */
    double MOS1tPhi;                /* temperature corrected Phi */
    double MOS1tVto;                /* temperature corrected Vto */
    double MOS1tSatCur;             /* temperature corrected saturation Cur. */
    double MOS1tSatCurDens; /* temperature corrected saturation Cur. density*/
    double MOS1tCbd;                /* temperature corrected B-D Capacitance */
    double MOS1tCbs;                /* temperature corrected B-S Capacitance */
    double MOS1tCj;         /* temperature corrected Bulk bottom Capacitance */
    double MOS1tCjsw;       /* temperature corrected Bulk side Capacitance */
    double MOS1tBulkPot;    /* temperature corrected Bulk potential */
    double MOS1tDepCap;     /* temperature adjusted transition point in */
                            /* the cureve matching Fc * Vj */
    double MOS1tVbi;        /* temperature adjusted Vbi */

    double MOS1icVBS;   /* initial condition B-S voltage */
    double MOS1icVDS;   /* initial condition D-S voltage */
    double MOS1icVGS;   /* initial condition G-S voltage */
    double MOS1von;
    double MOS1vdsat;
    double MOS1sourceVcrit; /* Vcrit for pos. vds */
    double MOS1drainVcrit;  /* Vcrit for pos. vds */
    double MOS1cd;
    double MOS1cbs;
    double MOS1cbd;
    double MOS1gmbs;
    double MOS1gm;
    double MOS1gds;
    double MOS1gbd;
    double MOS1gbs;
    double MOS1capbd;
    double MOS1capbs;
    double MOS1Cbd;
    double MOS1Cbdsw;
    double MOS1Cbs;
    double MOS1Cbssw;
    double MOS1f2d;
    double MOS1f3d;
    double MOS1f4d;
    double MOS1f2s;
    double MOS1f3s;
    double MOS1f4s;

/*
 * naming convention:
 * x = vgs
 * y = vbs
 * z = vds
 * cdr = cdrain
 */

#define	MOS1NDCOEFFS	30

#ifndef NODISTO
	double MOS1dCoeffs[MOS1NDCOEFFS];
#else /* NODISTO */
	double *MOS1dCoeffs;
#endif /* NODISTO */

#ifndef CONFIG

#define	capbs2		MOS1dCoeffs[0]
#define	capbs3		MOS1dCoeffs[1]
#define	capbd2		MOS1dCoeffs[2]
#define	capbd3		MOS1dCoeffs[3]
#define	gbs2		MOS1dCoeffs[4]
#define	gbs3		MOS1dCoeffs[5]
#define	gbd2		MOS1dCoeffs[6]
#define	gbd3		MOS1dCoeffs[7]
#define	capgb2		MOS1dCoeffs[8]
#define	capgb3		MOS1dCoeffs[9]
#define	cdr_x2		MOS1dCoeffs[10]
#define	cdr_y2		MOS1dCoeffs[11]
#define	cdr_z2		MOS1dCoeffs[12]
#define	cdr_xy		MOS1dCoeffs[13]
#define	cdr_yz		MOS1dCoeffs[14]
#define	cdr_xz		MOS1dCoeffs[15]
#define	cdr_x3		MOS1dCoeffs[16]
#define	cdr_y3		MOS1dCoeffs[17]
#define	cdr_z3		MOS1dCoeffs[18]
#define	cdr_x2z		MOS1dCoeffs[19]
#define	cdr_x2y		MOS1dCoeffs[20]
#define	cdr_y2z		MOS1dCoeffs[21]
#define	cdr_xy2		MOS1dCoeffs[22]
#define	cdr_xz2		MOS1dCoeffs[23]
#define	cdr_yz2		MOS1dCoeffs[24]
#define	cdr_xyz		MOS1dCoeffs[25]
#define	capgs2		MOS1dCoeffs[26]
#define	capgs3		MOS1dCoeffs[27]
#define	capgd2		MOS1dCoeffs[28]
#define	capgd3		MOS1dCoeffs[29]

#endif

#define MOS1RDNOIZ	0
#define MOS1RSNOIZ   1
#define MOS1IDNOIZ       2
#define MOS1FLNOIZ 3
#define MOS1TOTNOIZ    4

#define MOS1NSRCS     5     /* the number of MOS1FET noise sources*/

#ifndef NONOISE
    double MOS1nVar[NSTATVARS][MOS1NSRCS];
#else /* NONOISE */
	double **MOS1nVar;
#endif /* NONOISE */

    int MOS1mode;       /* device mode : 1 = normal, -1 = inverse */


    unsigned MOS1off:1;  /* non-zero to indicate device is off for dc analysis*/
    unsigned MOS1tempGiven :1;  /* instance temperature specified */
    unsigned MOS1lGiven :1;
    unsigned MOS1wGiven :1;
    unsigned MOS1drainAreaGiven :1;
    unsigned MOS1sourceAreaGiven    :1;
    unsigned MOS1drainSquaresGiven  :1;
    unsigned MOS1sourceSquaresGiven :1;
    unsigned MOS1drainPerimiterGiven    :1;
    unsigned MOS1sourcePerimiterGiven   :1;
    unsigned MOS1dNodePrimeSet  :1;
    unsigned MOS1sNodePrimeSet  :1;
    unsigned MOS1icVBSGiven :1;
    unsigned MOS1icVDSGiven :1;
    unsigned MOS1icVGSGiven :1;
    unsigned MOS1vonGiven   :1;
    unsigned MOS1vdsatGiven :1;
    unsigned MOS1modeGiven  :1;


    double *MOS1DdPtr;      /* pointer to sparse matrix element at
                                     * (Drain node,drain node) */
    double *MOS1GgPtr;      /* pointer to sparse matrix element at
                                     * (gate node,gate node) */
    double *MOS1SsPtr;      /* pointer to sparse matrix element at
                                     * (source node,source node) */
    double *MOS1BbPtr;      /* pointer to sparse matrix element at
                                     * (bulk node,bulk node) */
    double *MOS1DPdpPtr;    /* pointer to sparse matrix element at
                                     * (drain prime node,drain prime node) */
    double *MOS1SPspPtr;    /* pointer to sparse matrix element at
                                     * (source prime node,source prime node) */
    double *MOS1DdpPtr;     /* pointer to sparse matrix element at
                                     * (drain node,drain prime node) */
    double *MOS1GbPtr;      /* pointer to sparse matrix element at
                                     * (gate node,bulk node) */
    double *MOS1GdpPtr;     /* pointer to sparse matrix element at
                                     * (gate node,drain prime node) */
    double *MOS1GspPtr;     /* pointer to sparse matrix element at
                                     * (gate node,source prime node) */
    double *MOS1SspPtr;     /* pointer to sparse matrix element at
                                     * (source node,source prime node) */
    double *MOS1BdpPtr;     /* pointer to sparse matrix element at
                                     * (bulk node,drain prime node) */
    double *MOS1BspPtr;     /* pointer to sparse matrix element at
                                     * (bulk node,source prime node) */
    double *MOS1DPspPtr;    /* pointer to sparse matrix element at
                                     * (drain prime node,source prime node) */
    double *MOS1DPdPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,drain node) */
    double *MOS1BgPtr;      /* pointer to sparse matrix element at
                                     * (bulk node,gate node) */
    double *MOS1DPgPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,gate node) */

    double *MOS1SPgPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,gate node) */
    double *MOS1SPsPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,source node) */
    double *MOS1DPbPtr;     /* pointer to sparse matrix element at
                                     * (drain prime node,bulk node) */
    double *MOS1SPbPtr;     /* pointer to sparse matrix element at
                                     * (source prime node,bulk node) */
    double *MOS1SPdpPtr;    /* pointer to sparse matrix element at
                                     * (source prime node,drain prime node) */

    int  MOS1senParmNo;   /* parameter # for sensitivity use;
            set equal to 0  if  neither length
            nor width of the mosfet is a design
            parameter */
    unsigned MOS1sens_l :1;   /* field which indicates whether  
            length of the mosfet is a design
            parameter or not */
    unsigned MOS1sens_w :1;   /* field which indicates whether  
            width of the mosfet is a design
            parameter or not */
    unsigned MOS1senPertFlag :1; /* indictes whether the the 
            parameter of the particular instance is 
            to be perturbed */
    double MOS1cgs;
    double MOS1cgd;
    double MOS1cgb;
    double *MOS1sens;

#define MOS1senCgs MOS1sens /* contains pertured values of cgs */
#define MOS1senCgd MOS1sens + 6 /* contains perturbed values of cgd*/
#define MOS1senCgb MOS1sens + 12 /* contains perturbed values of cgb*/
#define MOS1senCbd MOS1sens + 18 /* contains perturbed values of cbd*/
#define MOS1senCbs MOS1sens + 24 /* contains perturbed values of cbs*/
#define MOS1senGds MOS1sens + 30 /* contains perturbed values of gds*/
#define MOS1senGbs MOS1sens + 36 /* contains perturbed values of gbs*/
#define MOS1senGbd MOS1sens + 42 /* contains perturbed values of gbd*/
#define MOS1senGm MOS1sens + 48 /* contains perturbed values of gm*/
#define MOS1senGmbs MOS1sens + 54 /* contains perturbed values of gmbs*/
#define MOS1dphigs_dl MOS1sens + 60
#define MOS1dphigd_dl MOS1sens + 61
#define MOS1dphigb_dl MOS1sens + 62
#define MOS1dphibs_dl MOS1sens + 63
#define MOS1dphibd_dl MOS1sens + 64
#define MOS1dphigs_dw MOS1sens + 65
#define MOS1dphigd_dw MOS1sens + 66
#define MOS1dphigb_dw MOS1sens + 67
#define MOS1dphibs_dw MOS1sens + 68
#define MOS1dphibd_dw MOS1sens + 69

} MOS1instance ;

#define MOS1vbd MOS1states+ 0   /* bulk-drain voltage */
#define MOS1vbs MOS1states+ 1   /* bulk-source voltage */
#define MOS1vgs MOS1states+ 2   /* gate-source voltage */
#define MOS1vds MOS1states+ 3   /* drain-source voltage */

#define MOS1capgs MOS1states+4  /* gate-source capacitor value */
#define MOS1qgs MOS1states+ 5   /* gate-source capacitor charge */
#define MOS1cqgs MOS1states+ 6  /* gate-source capacitor current */

#define MOS1capgd MOS1states+ 7 /* gate-drain capacitor value */
#define MOS1qgd MOS1states+ 8   /* gate-drain capacitor charge */
#define MOS1cqgd MOS1states+ 9  /* gate-drain capacitor current */

#define MOS1capgb MOS1states+10 /* gate-bulk capacitor value */
#define MOS1qgb MOS1states+ 11  /* gate-bulk capacitor charge */
#define MOS1cqgb MOS1states+ 12 /* gate-bulk capacitor current */

#define MOS1qbd MOS1states+ 13  /* bulk-drain capacitor charge */
#define MOS1cqbd MOS1states+ 14 /* bulk-drain capacitor current */

#define MOS1qbs MOS1states+ 15  /* bulk-source capacitor charge */
#define MOS1cqbs MOS1states+ 16 /* bulk-source capacitor current */

#define MOS1numStates 17

#define MOS1sensxpgs MOS1states+17 /* charge sensitivities and 
          their derivatives.  +18 for the derivatives:
          pointer to the beginning of the array */
#define MOS1sensxpgd  MOS1states+19
#define MOS1sensxpgb  MOS1states+21
#define MOS1sensxpbs  MOS1states+23
#define MOS1sensxpbd  MOS1states+25

#define MOS1numSenStates 10


/* per model data */

    /* NOTE:  parameters marked 'input - use xxxx' are paramters for
     * which a temperature correction is applied in MOS1temp, thus
     * the MOS1xxxx value in the per-instance structure should be used
     * instead in all calculations 
     */


typedef struct sMOS1model {       /* model structure for a resistor */
    int MOS1modType;    /* type index to this device type */
    struct sMOS1model *MOS1nextModel;    /* pointer to next possible model 
                                          *in linked list */
    MOS1instance * MOS1instances; /* pointer to list of instances 
                                   * that have this model */
    IFuid MOS1modName;       /* pointer to character string naming this model */
    int MOS1type;       /* device type : 1 = nmos,  -1 = pmos */
    double MOS1tnom;        /* temperature at which parameters measured */
    double MOS1latDiff;
    double MOS1jctSatCurDensity;    /* input - use tSatCurDens */
    double MOS1jctSatCur;   /* input - use tSatCur */
    double MOS1drainResistance;
    double MOS1sourceResistance;
    double MOS1sheetResistance;
    double MOS1transconductance;    /* input - use tTransconductance */
    double MOS1gateSourceOverlapCapFactor;
    double MOS1gateDrainOverlapCapFactor;
    double MOS1gateBulkOverlapCapFactor;
    double MOS1oxideCapFactor;
    double MOS1vt0; /* input - use tVto */
    double MOS1capBD;   /* input - use tCbd */
    double MOS1capBS;   /* input - use tCbs */
    double MOS1bulkCapFactor;   /* input - use tCj */
    double MOS1sideWallCapFactor;   /* input - use tCjsw */
    double MOS1bulkJctPotential;    /* input - use tBulkPot */
    double MOS1bulkJctBotGradingCoeff;
    double MOS1bulkJctSideGradingCoeff;
    double MOS1fwdCapDepCoeff;
    double MOS1phi; /* input - use tPhi */
    double MOS1gamma;
    double MOS1lambda;
    double MOS1substrateDoping;
    int MOS1gateType;
    double MOS1surfaceStateDensity;
    double MOS1oxideThickness;
    double MOS1surfaceMobility; /* input - use tSurfMob */
    double MOS1fNcoef;
    double MOS1fNexp;

    unsigned MOS1typeGiven  :1;
    unsigned MOS1latDiffGiven   :1;
    unsigned MOS1jctSatCurDensityGiven  :1;
    unsigned MOS1jctSatCurGiven :1;
    unsigned MOS1drainResistanceGiven   :1;
    unsigned MOS1sourceResistanceGiven  :1;
    unsigned MOS1sheetResistanceGiven   :1;
    unsigned MOS1transconductanceGiven  :1;
    unsigned MOS1gateSourceOverlapCapFactorGiven    :1;
    unsigned MOS1gateDrainOverlapCapFactorGiven :1;
    unsigned MOS1gateBulkOverlapCapFactorGiven  :1;
    unsigned MOS1vt0Given   :1;
    unsigned MOS1capBDGiven :1;
    unsigned MOS1capBSGiven :1;
    unsigned MOS1bulkCapFactorGiven :1;
    unsigned MOS1sideWallCapFactorGiven   :1;
    unsigned MOS1bulkJctPotentialGiven  :1;
    unsigned MOS1bulkJctBotGradingCoeffGiven    :1;
    unsigned MOS1bulkJctSideGradingCoeffGiven   :1;
    unsigned MOS1fwdCapDepCoeffGiven    :1;
    unsigned MOS1phiGiven   :1;
    unsigned MOS1gammaGiven :1;
    unsigned MOS1lambdaGiven    :1;
    unsigned MOS1substrateDopingGiven   :1;
    unsigned MOS1gateTypeGiven  :1;
    unsigned MOS1surfaceStateDensityGiven   :1;
    unsigned MOS1oxideThicknessGiven    :1;
    unsigned MOS1surfaceMobilityGiven   :1;
    unsigned MOS1tnomGiven  :1;
    unsigned MOS1fNcoefGiven  :1;
    unsigned MOS1fNexpGiven   :1;

} MOS1model;

#ifndef NMOS
#define NMOS 1
#define PMOS -1
#endif /*NMOS*/

/* device parameters */
#define MOS1_W 1
#define MOS1_L 2
#define MOS1_AS 3
#define MOS1_AD 4
#define MOS1_PS 5
#define MOS1_PD 6
#define MOS1_NRS 7
#define MOS1_NRD 8
#define MOS1_OFF 9
#define MOS1_IC 10
#define MOS1_IC_VBS 11
#define MOS1_IC_VDS 12
#define MOS1_IC_VGS 13
#define MOS1_W_SENS 14
#define MOS1_L_SENS 15
#define MOS1_CB 16
#define MOS1_CG 17
#define MOS1_CS 18
#define MOS1_POWER 19
#define MOS1_TEMP 20

/* model paramerers */
#define MOS1_MOD_VTO 101
#define MOS1_MOD_KP 102
#define MOS1_MOD_GAMMA 103
#define MOS1_MOD_PHI 104
#define MOS1_MOD_LAMBDA 105
#define MOS1_MOD_RD 106
#define MOS1_MOD_RS 107
#define MOS1_MOD_CBD 108
#define MOS1_MOD_CBS 109
#define MOS1_MOD_IS 110
#define MOS1_MOD_PB 111
#define MOS1_MOD_CGSO 112
#define MOS1_MOD_CGDO 113
#define MOS1_MOD_CGBO 114
#define MOS1_MOD_CJ 115
#define MOS1_MOD_MJ 116
#define MOS1_MOD_CJSW 117
#define MOS1_MOD_MJSW 118
#define MOS1_MOD_JS 119
#define MOS1_MOD_TOX 120
#define MOS1_MOD_LD 121
#define MOS1_MOD_RSH 122
#define MOS1_MOD_U0 123
#define MOS1_MOD_FC 124
#define MOS1_MOD_NSUB 125
#define MOS1_MOD_TPG 126
#define MOS1_MOD_NSS 127
#define MOS1_MOD_NMOS 128
#define MOS1_MOD_PMOS 129
#define MOS1_MOD_TNOM 130
#define MOS1_MOD_KF 131
#define MOS1_MOD_AF 132
#define MOS1_MOD_TYPE 133

/* device questions */
#define MOS1_CGS                201
#define MOS1_CGD                202
#define MOS1_DNODE              203
#define MOS1_GNODE              204
#define MOS1_SNODE              205
#define MOS1_BNODE              206
#define MOS1_DNODEPRIME         207
#define MOS1_SNODEPRIME         208
#define MOS1_SOURCECONDUCT      209
#define MOS1_DRAINCONDUCT       210
#define MOS1_VON                211
#define MOS1_VDSAT              212
#define MOS1_SOURCEVCRIT        213
#define MOS1_DRAINVCRIT         214
#define MOS1_CD                 215
#define MOS1_CBS                216
#define MOS1_CBD                217
#define MOS1_GMBS               218
#define MOS1_GM                 219
#define MOS1_GDS                220
#define MOS1_GBD                221
#define MOS1_GBS                222
#define MOS1_CAPBD              223
#define MOS1_CAPBS              224
#define MOS1_CAPZEROBIASBD      225
#define MOS1_CAPZEROBIASBDSW    226
#define MOS1_CAPZEROBIASBS      227
#define MOS1_CAPZEROBIASBSSW    228
#define MOS1_VBD                229
#define MOS1_VBS                230
#define MOS1_VGS                231
#define MOS1_VDS                232
#define MOS1_CAPGS              233
#define MOS1_QGS                234
#define MOS1_CQGS               235
#define MOS1_CAPGD              236
#define MOS1_QGD                237
#define MOS1_CQGD               238
#define MOS1_CAPGB              239
#define MOS1_QGB                240
#define MOS1_CQGB               241
#define MOS1_QBD                242
#define MOS1_CQBD               243
#define MOS1_QBS                244
#define MOS1_CQBS               245
#define MOS1_L_SENS_REAL               246
#define MOS1_L_SENS_IMAG               247
#define MOS1_L_SENS_MAG                248 
#define MOS1_L_SENS_PH                 249 
#define MOS1_L_SENS_CPLX               250
#define MOS1_W_SENS_REAL               251
#define MOS1_W_SENS_IMAG               252
#define MOS1_W_SENS_MAG                253 
#define MOS1_W_SENS_PH                 254 
#define MOS1_W_SENS_CPLX               255
#define MOS1_L_SENS_DC                 256
#define MOS1_W_SENS_DC                 257
#define MOS1_SOURCERESIST      258
#define MOS1_DRAINRESIST       259

/* model questions */

#include "mos1ext.h"

#endif /*MOS1*/

